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정건욱

Chung, Kunook
Mixed Dimensional Materials and Devices Lab.
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Microstructures of GaN Thin Films Grown on Graphene Layers

Author(s)
Yoo, HyobinChung, KunookChoi, Yong SeokKang, Chan SoonOh, Kyu HwanKim, MiyoungYi, Gyu-Chul
Issued Date
2012-01
DOI
10.1002/adma.201103829
URI
https://scholarworks.unist.ac.kr/handle/201301/26384
Fulltext
https://onlinelibrary.wiley.com/doi/full/10.1002/adma.201103829
Citation
ADVANCED MATERIALS, v.24, no.4, pp.515 - 218
Abstract
Plan-view and cross-sectional transmission electron microscopy images show the microstructural properties of GaN thin films grown on graphene layers, including dislocation types and density, crystalline orientation and grain boundaries. The roles of ZnO nanowalls and GaN intermediate layers in the heteroepitaxial growth of GaN on graphene, revealed by cross-sectional transmission electron microscopy, are also discussed.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
0935-9648
Keyword (Author)
GaN filmsgraphenetransmission electron microscopythreading dislocationsgrain boundaries
Keyword
CHEMICAL-VAPOR-DEPOSITIONBUFFER LAYEREPITAXIAL GANLASER-DIODESSAPPHIREDISLOCATIONSEVOLUTION

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