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Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM

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Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory

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Title
Large-area, scalable fabrication of conical TiN/GST/TiN nanoarray for low-power phase change memory
Author
Yoon, Jong MoonJeong, Hu YoungHong, Sung HoonYin, YouMoon, Hyoung SeokJeong, Seong-JunHan, Jun HeeKim, Yong InKim, Yong TaeLee, HeonKim, Sang OukLee, Jeong Yong
Keywords
Aerial arrays; Block copolymer lithography; Cell dimensions; Device operations; Low Power; Low reset currents; Low-power consumption; Nano scale; Nanoarrays; Phase change memory cells; Reset currents; RESET pulse; Set operation; Threshold switching; Ultrahigh density
Issue Date
201201
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, v.22, no.4, pp.1347 - 1351
Abstract
We demonstrate the fabrication and phase change memory performance of a conical TiN/Ge(2)Sb(2)Te(5) (GST)/TiN nanoarray prepared via block copolymer lithography and straightforward two-step etching. The created 30 nm scale phase change memory cell (aerial array density: similar to 207 Gbit inch(-2)) showed a threshold switching voltage of 1.1 V, a value compatible to conventional phase change memory cells. More significantly, the cell could be amorphized by a reset pulse of 1.8 V height and 100 ns width, where the reset current was 100 mu A. Such a low reset current, presumably caused by nanoscale small cell dimension, is greatly beneficial for low power consumption device operation. Reversibly, the set operation was accomplished by crystallization with a set pulse of 1.2 V height, 100 ns width, and 100 ns trailing. This work provides a significant step for low power consumption and ultra-high density storage based on phase change materials.
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DOI
http://dx.doi.org/10.1039/c1jm14190b
ISSN
0959-9428
Appears in Collections:
UCRF_Journal Papers

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