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Yang, Changduk
Advanced Tech-Optoelectronic Materials Synthesis Lab (ATOMS)
Research Interests
  • Optoelectronic materials synthesis/organic electronics, functionalization of carbonaceous solids, advanced materials chemistry, macromolecular chemistry

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Swapping field-effect transistor characteristics in polymeric diketopyrrolopyrrole semiconductors: Debut of an electron dominant transporting polymer

Cited 21 times inthomson ciCited 15 times inthomson ci
Title
Swapping field-effect transistor characteristics in polymeric diketopyrrolopyrrole semiconductors: Debut of an electron dominant transporting polymer
Author
Lee, JunghoonCho, ShinukSeo, Jung HwaAnant, PiyushJacob, JosemonYang, Changduk
Keywords
Ambipolar; Building blockes; Comonomers; Diketopyrrolopyrroles; Electron-deficient; Fact-finding; N-channel; N-channel transistors; Organic semiconductor; P-type; Thiophenyl; Transport characteristics
Issue Date
201201
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY, v.22, no.4, pp.1504 - 1510
Abstract
A fact-finding study on thiophenyl diketopyrrolopyrrole (TDPP)-containing polymers for electronically convertible transport characteristics in organic field effect transistors (OFETs) is presented. In the subject of this consideration, a TDPP-based polymer with bis-benzothiadiazole (BisBT) units that serve as powerful electron-deficient building blocks, namely PDTDPP-BisBT, is prepared in order to achieve an n-channel transistor. The resulting polymer shows n-channel dominant ambipolar OFET characteristics and its electron mobility (1.3 x 10(-3) cm(2) V(-1) s(-1)) is found to be one order of magnitude higher than the hole mobility. Besides, the PDTDPP-BisBT OFET performance is independent of film-deposition conditions due to its completely amorphous microstructure, supported by the atomic force microscopy (AFM) and X-ray diffraction (XRD) analyses. Herein, we report an intriguing discovery in sync with our previous studies that TDPP-based polymers can function as a p-type, n-type, or ambipolar organic semiconductor in accordance with the degree of electron affinity of the comonomers.
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DOI
http://dx.doi.org/10.1039/c1jm14549e
ISSN
0959-9428
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