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Kim, Dai-Sik
Nano Optics Group
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Control of optical nanometer gap shapes made via standard lithography using atomic layer deposition

Author(s)
Rhie, JiyeahLee, DukhyungBahk, Young-MiJeong, JeeyoonChoi, GeunchangLee, YoujinKim, SunghwanHong, SeunghunKim, Dai-Sik
Issued Date
2018-04
DOI
10.1117/1.JMM.17.2.023504
URI
https://scholarworks.unist.ac.kr/handle/201301/26354
Citation
JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v.17, no.2, pp.023504
Abstract
Atomic layer deposition is an efficient method for coating a few nanometer-thick alumina over a wafer scale. This method combined with the standard photolithography process was presented to fabricate metallic nanometer gaps that optically act in terahertz regimes. However, the cross-sectional view of the gap shape of the metal-insulator-metal nanogap structure varies depending on the conditions from the stepwise procedure. In specific, selecting photoresist materials, adding ion milling and chemical etching processes, and varying metal thicknesses and substrates result in various optical gap widths and shapes. Since the cross-sectional gap shape affects the field enhancement of the tunneled electromagnetic waves via the nanogap, the control of tailoring the gap shape is necessary. Thus, we present five different versions of fabricating quadrangle-ring-shaped nanometer gap arrays with varying different kinds of outcomes. We foresee the usage of the suggested category for Specific applications. (C) The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License Distribution or repro-
Publisher
SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
ISSN
1932-5150
Keyword (Author)
atomic layer depositionstandard lithographynanometer gapcross-sectional gap shapefield enhancement
Keyword
TERAHERTZ FIELD ENHANCEMENTTHIN-FILM GROWTHHYDROGEN SILSESQUIOXANEARRAYSANTENNASLIGHTMETAMATERIALSNANOPARTICLESAG

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