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Sohn, Chang Hee
Laboratory for Unobtainable Functional Oxides
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dc.citation.endPage 7166 -
dc.citation.number 7 -
dc.citation.startPage 7159 -
dc.citation.title ACS NANO -
dc.citation.volume 12 -
dc.contributor.author Sharma, Yogesh -
dc.contributor.author Balachandran, Janakiraman -
dc.contributor.author Sohn, Changhee -
dc.contributor.author Krogel, Jaron T. -
dc.contributor.author Ganesh, Panchapakesan -
dc.contributor.author Collins, Liam -
dc.contributor.author Ievlev, Anton V. -
dc.contributor.author Li, Qian -
dc.contributor.author Gao, Xiang -
dc.contributor.author Balke, Nina -
dc.contributor.author Ovchinnikova, Olga S. -
dc.contributor.author Kalinin, Sergei V. -
dc.contributor.author Heinonen, Olle -
dc.contributor.author Lee, Ho Nyung -
dc.date.accessioned 2023-12-21T20:36:57Z -
dc.date.available 2023-12-21T20:36:57Z -
dc.date.created 2019-03-07 -
dc.date.issued 2018-07 -
dc.description.abstract Strongly correlated vanadium dioxide (VO2) is one of the most promising materials that exhibits a temperature-driven, metal insulator transition (MIT) near room temperature. The ability to manipulate the MIT at nanoscale offers both insight into understanding the energetics of phase transition and a promising potential for nanoelectronic devices. In this work, we study nanoscale electrochemical modifications of the MIT in epitaxial VO2 thin films using a combined approach with scanning probe microscopy (SPM) and theoretical calculations. We find that applying electric voltages of different polarity through an SPM tip locally changes the contact potential difference and conductivity on the surface of VO2 by modulating the oxygen stoichiometry. We observed nearly 2 orders of magnitude change in resistance between positive and negative biased-tip written areas of the film, demonstrating the electric field modulated MIT behavior at the nanoscale. Density functional theory calculations, benchmarked against more accurate many-body quantum Monte Carlo calculations, provide information on the formation energetics of oxygen defects that can be further manipulated by strain. This study highlights the crucial role of oxygen vacancies in controlling the MIT in epitaxial VO2 thin films, useful for developing advanced electronic and iontronic devices. -
dc.identifier.bibliographicCitation ACS NANO, v.12, no.7, pp.7159 - 7166 -
dc.identifier.doi 10.1021/acsnano.8b03031 -
dc.identifier.issn 1936-0851 -
dc.identifier.scopusid 2-s2.0-85048788595 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/26283 -
dc.identifier.url https://pubs.acs.org/doi/10.1021/acsnano.8b03031 -
dc.identifier.wosid 000440505000081 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Nanoscale Control of Oxygen Defects and Metal-Insulator Transition in Epitaxial Vanadium Dioxides -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science -
dc.type.docType Article -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor vanadium dioxide -
dc.subject.keywordAuthor metal insulator transition -
dc.subject.keywordAuthor scanning probe microscopy -
dc.subject.keywordAuthor oxygen vacancy -
dc.subject.keywordAuthor density functional theory -
dc.subject.keywordAuthor quantum Monte Carlo -
dc.subject.keywordPlus TOTAL-ENERGY CALCULATIONS -
dc.subject.keywordPlus PROBE FORCE MICROSCOPY -
dc.subject.keywordPlus WAVE BASIS-SET -
dc.subject.keywordPlus PHASE-TRANSITION -
dc.subject.keywordPlus THIN-FILMS -
dc.subject.keywordPlus VO2 -
dc.subject.keywordPlus TEMPERATURE -
dc.subject.keywordPlus STRAIN -
dc.subject.keywordPlus OXIDES -

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