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남궁선

Namgung, Seon
Quantum Device Lab.
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dc.citation.endPage 111 -
dc.citation.number 3 -
dc.citation.startPage 103 -
dc.citation.title NPG ASIA MATERIALS -
dc.citation.volume 2 -
dc.contributor.author Lee, Byung Yang -
dc.contributor.author Sung, Moon Gyu -
dc.contributor.author Lee, Hyungwoo -
dc.contributor.author Namgung, Seon -
dc.contributor.author Park, Sung Young -
dc.contributor.author Choi, Dong Shin -
dc.contributor.author Hong, Seunghun -
dc.date.accessioned 2023-12-22T07:06:47Z -
dc.date.available 2023-12-22T07:06:47Z -
dc.date.created 2019-03-04 -
dc.date.issued 2010-07 -
dc.description.abstract Although advanced devices based on nanotubes (NTs) and nanowires (NWs) are drawing much attention, devices based on a single NT or NW are not suitable for general manufacturing purposes, as it is still extremely difficult to control the electronic properties, growth and alignment of individual NTs or NWs on an industrially reliable scale. An alternative strategy for implementing NTs or NWs in real-world devices is the use of NT- or NW-network-based structures containing a number of NTs or NWs. Herein, we review the recent progress in NT/NW-network-based integrated devices. The technology for NW/NT-network-based devices is supported by massive integration methods, such as directed assembly, printing and directed growth, and devices based on NW/NT networks display several unique properties, such as percolating conduction and scaling behaviors, that differentiate them from individual NT/NW-based devices. A variety of applications are possible for NT/NW networks, including transistors and sensors, all of which offer unique characteristics for use in integrated nanoelectronics. -
dc.identifier.bibliographicCitation NPG ASIA MATERIALS, v.2, no.3, pp.103 - 111 -
dc.identifier.doi 10.1038/asiamat.2010.83 -
dc.identifier.issn 1884-4049 -
dc.identifier.scopusid 2-s2.0-84863115793 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/26270 -
dc.identifier.url https://www.nature.com/articles/am201083 -
dc.identifier.wosid 000297618600004 -
dc.language 영어 -
dc.publisher Nature Publishing Group -
dc.title Integrated devices based on networks of nanotubes and nanowires -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Materials Science -
dc.type.docType Review -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus WALLED CARBON NANOTUBES -
dc.subject.keywordPlus FIELD-EFFECT TRANSISTORS -
dc.subject.keywordPlus THIN-FILM TRANSISTORS -
dc.subject.keywordPlus LARGE-SCALE -
dc.subject.keywordPlus SILICON NANOWIRES -
dc.subject.keywordPlus DIRECTED GROWTH -
dc.subject.keywordPlus STEM-CELLS -
dc.subject.keywordPlus ARRAYS -
dc.subject.keywordPlus ELECTRONICS -
dc.subject.keywordPlus SENSORS -

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