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Namgung, Seon
Quantum Device Lab.
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Wide Contact Structures for Low-Noise Nanochannel Devices Based on a Carbon Nanotube Network

Author(s)
Lee, HyungwooLee, MinbaekNamgung, SeonHong, Seunghun
Issued Date
2010-12
DOI
10.1021/nn102296e
URI
https://scholarworks.unist.ac.kr/handle/201301/26269
Fulltext
https://pubs.acs.org/doi/10.1021/nn102296e
Citation
ACS NANO, v.4, no.12, pp.7612 - 7618
Abstract
We have developed a wide contact structure for low-noise nanochannel devices based on a carbon nanotube (CNT) network. This low-noise CNT network-based device has a dumbbell-shaped channel, which has wide CNT/electrode contact regions and, in effect, reduces the contact noise. We also performed a systematic analysis of structured CNT networks and established an empirical formula that can explain the noise behavior of arbitrary-shaped CNT network-based devices including the effect of contact regions and CNT alignment. Interestingly, our analysis revealed that the noise amplitude of aligned CNT networks behaves quite differently compared with that of randomly oriented CNT networks. Our results should be an important guideline in designing low-noise nanoscale devices based on a CNT network for various applications such as a highly sensitive low-noise sensor.
Publisher
AMER CHEMICAL SOC
ISSN
1936-0851
Keyword (Author)
carbon nanotube1/f noiselow frequency noisecontact resistancealigned network
Keyword
FIELD-EFFECT TRANSISTORS1/F NOISEPERCOLATION-THRESHOLDSINGLEFLUCTUATIONSRESISTANCEFILMS

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