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Improved performance in TIPS-pentacene field effect transistors using solvent additives

Cited 4 times inthomson ciCited 1 times inthomson ci
Title
Improved performance in TIPS-pentacene field effect transistors using solvent additives
Author
Chae, Gil JoJeong, Seung-HyeonBaek, Jeong HoonWalker, BrightSong, Chung KunSeo, Jung Hwa
Keywords
Chloronaphthalenes; Crystalline domains; Device performance; Effect of solvents; Field effect transistor (FETs); Molecular ordering; Optical microscopy measurements; Solvent additives
Issue Date
201307
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.27, pp.4216 - 4221
Abstract
The effect of solvent additives on the performance of 6,13- bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) field effect transistors (FETs) was investigated. Hole mobilities increased from 0.10 cm 2 V-1 s-1 for pristine devices to 0.73 or 0.71 cm2 V-1 s-1, when TIPS-pentacene FETs were processed with diphenyl ether (DPE) or chloronaphthalene (CN), respectively. In order to examine the impact of additives on the surface morphology, molecular ordering and crystallinity of TIPS-pentacene, scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical microscopy measurements were carried out. Appropriate amounts of additives were found to induce the formation of well-ordered crystalline domains in TIPS-pentacene films, resulting in enhanced hole transport as well as consistent device performance. Additionally, reduced contact resistances were observed in devices processed with additives compared to neat TIPS-pentacene FET devices. Our findings indicate that the use of solvent additives constitutes a new and effective methodology for the fabrication of OFETs with improved performance.
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DOI
http://dx.doi.org/10.1039/c3tc30506f
ISSN
2050-7526
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