We investigated the source-to-drain capacitance (C(sd)) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of C(sd) by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-to-drain capacitance component, the accuracy of a small-signal model was significantly improved on the imaginary part of Y(22)-parameter.
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG