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Author

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs

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Title
Investigation of source-to-drain capacitance by DIBL effect of silicon nanowire MOSFETs
Author
Cho, SeongjaeKang, In ManKim, Kyung Rok
Keywords
DIBL effects; High drain voltage; Imaginary parts; MOSFETs; P-n junction; Silicon nanowire MOSFETs; Silicon Nanowires; Small signal model; Source-to-drain capacitance
Issue Date
201010
Publisher
IEICE-INST ELECTRONICS INFORMATION COMMUNICATIONS ENG
Citation
IEICE ELECTRONICS EXPRESS, v.7, no.19, pp.1499 - 1503
Abstract
We investigated the source-to-drain capacitance (C(sd)) due to DIBL effect of silicon nanowire (SNW) MOSFETs. Short-channel SNW devices operating at high drain voltages have the positive value of C(sd) by DIBL effect. On the other hand, junctionless SNW MOSFETs without source/drain (S/D) PN junctions have negative or zero values by small DIBL effect. By considering the additional source-to-drain capacitance component, the accuracy of a small-signal model was significantly improved on the imaginary part of Y(22)-parameter.
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DOI
http://dx.doi.org/10.1587/elex.7.1499
ISSN
1349-2543
Appears in Collections:
ECE_Journal Papers
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