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DC Field | Value | Language |
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dc.citation.endPage | 3149 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 3142 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 11 | - |
dc.contributor.author | Lee, Tae Yoon | - |
dc.contributor.author | Lee, Kyoungjun | - |
dc.contributor.author | Lim, Hong Heon | - |
dc.contributor.author | Song, Myeong Seop | - |
dc.contributor.author | Yang, Sang Mo | - |
dc.contributor.author | Yoo, Hyang Keun | - |
dc.contributor.author | Suh, Dong Ik | - |
dc.contributor.author | Zhu, Zhongwei | - |
dc.contributor.author | Yoon, Alexander | - |
dc.contributor.author | Macdonald, Matthew R. | - |
dc.contributor.author | Lei, Xinjian | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Lee, Donghoon | - |
dc.contributor.author | Park, Kunwoo | - |
dc.contributor.author | Park, Jungwon | - |
dc.contributor.author | Chae, Seung Chul | - |
dc.date.accessioned | 2023-12-21T19:42:06Z | - |
dc.date.available | 2023-12-21T19:42:06Z | - |
dc.date.created | 2019-02-08 | - |
dc.date.issued | 2019-01 | - |
dc.description.abstract | The ferroelectricity in ultrathin HfO2 offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the "wake-up" effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO2 thin film. Compared with a pristine specimen, the Si-doped HfO2 thin film exhibited a partial increase in polarization after a finite number of ferroelectric switching behaviors. The polarization-switching behavior was analyzed using the nucleation-limited switching model characterized by a Lorentzian distribution of logarithmic domain-switching times. The polarization switching was simulated using the Monte Carlo method with respect to the effect of defects. Comparing the experimental results with the simulations revealed that the wake-up effect in the HfO2 thin film is accompanied by the suppression of disorder. | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.11, no.3, pp.3142 - 3149 | - |
dc.identifier.doi | 10.1021/acsami.8b11681 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-85060065043 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/25848 | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.8b11681 | - |
dc.identifier.wosid | 000457067300067 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2 | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics; Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | ferroelectricity | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | FeRAM | - |
dc.subject.keywordAuthor | defects | - |
dc.subject.keywordAuthor | thin films | - |
dc.subject.keywordAuthor | domain switching | - |
dc.subject.keywordPlus | HAFNIUM OXIDE | - |
dc.subject.keywordPlus | NEGATIVE CAPACITANCE | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | KINETICS | - |
dc.subject.keywordPlus | IMPACT | - |
dc.subject.keywordPlus | PHASE | - |
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