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- Lee, Geunsik
- Computational Research on Electronic Structure and Transport in Condensed Materials
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| DC Field | Value | Language |
|---|---|---|
| dc.citation.endPage | 873 | - |
| dc.citation.startPage | 870 | - |
| dc.citation.title | OPTICAL MATERIALS | - |
| dc.citation.volume | 84 | - |
| dc.contributor.author | Park, Youngsin | - |
| dc.contributor.author | Choi, Soo Ho | - |
| dc.contributor.author | Lee, Geunsik | - |
| dc.contributor.author | Yang, Woochul | - |
| dc.contributor.author | Im, Hyunsik | - |
| dc.date.accessioned | 2023-12-21T20:10:39Z | - |
| dc.date.available | 2023-12-21T20:10:39Z | - |
| dc.date.created | 2018-08-16 | - |
| dc.date.issued | 2018-10 | - |
| dc.description.abstract | We investigated the optical behaviour of excitons in monolayer MoS2 prepared on a 60 nm-thick metal (Au) ring structure patterned on SiO2. CVD-grown monolayer MoS2 was transferred to the metal structure and placed in contact with three different environments simultaneously: SiO2, Au metal and air. The optical properties of the transferred MoS2 on the substrates were characterized through micro-photoluminescence (μ-PL) measurements. PL peaks were observed near ∼1.82 eV for defect-related emission, ∼1.92 eV for an A exciton, which includes a neutral exciton and a trion, and ∼2.1 eV for a B exciton. The optical band gap and exciton-phonon interaction of the samples on the three substrates were investigated by measuring the temperature-dependent photoluminescence. | - |
| dc.identifier.bibliographicCitation | OPTICAL MATERIALS, v.84, pp.870 - 873 | - |
| dc.identifier.doi | 10.1016/j.optmat.2018.08.019 | - |
| dc.identifier.issn | 0925-3467 | - |
| dc.identifier.scopusid | 2-s2.0-85051500811 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/24559 | - |
| dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0925346718305573 | - |
| dc.identifier.wosid | 000446145200123 | - |
| dc.language | 영어 | - |
| dc.publisher | ELSEVIER SCIENCE BV | - |
| dc.title | Effects of contact material on complex excitonic behaviour of monolayer MoS2 | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | FALSE | - |
| dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Optics | - |
| dc.relation.journalResearchArea | Materials Science; Optics | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | MoS2 | - |
| dc.subject.keywordAuthor | Photoluminescence | - |
| dc.subject.keywordAuthor | Exciton | - |
| dc.subject.keywordAuthor | Trion | - |
| dc.subject.keywordPlus | TEMPERATURE-DEPENDENCE | - |
| dc.subject.keywordPlus | THIN MOS2 | - |
| dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
| dc.subject.keywordPlus | SEMICONDUCTOR | - |
| dc.subject.keywordPlus | TRANSISTORS | - |
| dc.subject.keywordPlus | DIVERSITY | - |
| dc.subject.keywordPlus | STATES | - |
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