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Lee, Zonghoon
Atomic-Scale Electron Microscopy Lab.
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Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor

Author(s)
Zhao, YuxiSong, Jeong-GyuRyu, Gyeong HeeKo, Kyung YongWoo, Whang JeKim, YoungjunKim, DonghyunLim, Jun HyungLee, SunheeLee, ZonghoonPark, JusangKim, Hyungjun
Issued Date
2018-05
DOI
10.1039/c8nr00108a
URI
https://scholarworks.unist.ac.kr/handle/201301/24452
Fulltext
http://pubs.rsc.org/en/Content/ArticleLanding/2018/NR/C8NR00108A#!divAbstract
Citation
NANOSCALE, v.10, no.19, pp.9338 - 9345
Abstract
The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 degrees C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)(6) and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2 -based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.
Publisher
ROYAL SOC CHEMISTRY
ISSN
2040-3364
Keyword
ATOMIC LAYER DEPOSITIONTRANSITION-METAL DICHALCOGENIDESHYDROGEN EVOLUTION REACTIONCHEMICAL-VAPOR-DEPOSITIONTHIN-FILMMOLYBDENUM-DISULFIDESENSING APPLICATIONSCONTROLLABLE GROWTHMONOLAYER MOS2TRANSISTORS

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