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Kim, Kyung Rok
Nano-Electronic Emerging Devices Lab.
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dc.citation.endPage 4 -
dc.citation.number 22 -
dc.citation.startPage 1 -
dc.citation.title APPLIED PHYSICS LETTERS -
dc.citation.volume 103 -
dc.contributor.author Cho, Seongjae -
dc.contributor.author Kang, In Man -
dc.contributor.author Kim, Kyung Rok -
dc.contributor.author Park, Byung-Gook -
dc.contributor.author Harris, Jr. James S. -
dc.date.accessioned 2023-12-22T03:14:32Z -
dc.date.available 2023-12-22T03:14:32Z -
dc.date.created 2013-12-10 -
dc.date.issued 2013-11 -
dc.description.abstract In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications. -
dc.identifier.bibliographicCitation APPLIED PHYSICS LETTERS, v.103, no.22, pp.1 - 4 -
dc.identifier.doi 10.1063/1.4833295 -
dc.identifier.issn 0003-6951 -
dc.identifier.scopusid 2-s2.0-84888634958 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/2421 -
dc.identifier.url http://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&scp=84888634958 -
dc.identifier.wosid 000327696300033 -
dc.language 영어 -
dc.publisher AMER INST PHYSICS -
dc.title Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application -
dc.type Article -
dc.relation.journalWebOfScienceCategory Physics, Applied -
dc.relation.journalResearchArea Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -

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