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Author

Kim, Kyung Rok
Nano-Electronic Emerging Devices (NEEDs) Lab
Research Interests
  • Nano-CMOS, neuromorphic device, terahertz (THz) plasma-wave transistor (PWT)

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Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application

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Title
Silicon-compatible high-hole-mobility transistor with an undoped germanium channel for low-power application
Author
Cho, SeongjaeKang, In ManKim, Kyung RokPark, Byung-GookHarris, Jr. James S.
Keywords
GE; MOSFETS; CURRENTS
Issue Date
201311
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.103, no.22, pp.1 - 4
Abstract
In this work, Ge-based high-hole-mobility transistor with Si compatibility is designed, and its performance is evaluated. A 2-dimensional hole gas is effectively constructed by a AlGaAs/Ge/Si heterojunction with a sufficiently large valence band offset. Moreover, an intrinsic Ge channel is exploited so that high hole mobility is preserved without dopant scattering. Effects of design parameters such as gate length, Ge channel thickness, and aluminum fraction in the barrier material on device characteristics are thoroughly investigated through device simulations. A high on-current above 30 μA/μm along with a low subthreshold swing was obtained from an optimized planar device for low-power applications.
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DOI
http://dx.doi.org/10.1063/1.4833295
ISSN
0003-6951
Appears in Collections:
ECE_Journal Papers
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