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Choi, Kyoung Jin
Energy Conversion Materials Lab.
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Transfer of ultrathin molybdenum disulfide and transparent nanomesh electrode onto silicon for efficient heterojunction solar cells

Author(s)
Kang, Sung BunKwon, Ki ChangChoi, Kyoung SoonLee, RochelleHong, KootakSuh, Jun MinIm, Min JiSanger, AmitChoi, In YoungKim, Soo YoungShin, Jae CheolJang, Ho WonChoi, Kyoung Jin
Issued Date
2018-08
DOI
10.1016/j.nanoen.2018.06.014
URI
https://scholarworks.unist.ac.kr/handle/201301/24208
Fulltext
https://www.sciencedirect.com/science/article/pii/S2211285518304105
Citation
NANO ENERGY, v.50, pp.649 - 658
Abstract
Two-dimensional transition-metal dichalcogenides (TMDCs) are very promising for photovoltaic (PV) applications due to their excellent light absorption properties and appropriate bandgap energy, Although multifunctional applications of TMDCs in photovoltaic devices have been achieved, the photovoltaic conversion efficiency under 1 sun is still very low with small active area because of their inexpedient high sheet resistance and limitation of synthesis techniques. In this study, we demonstrate uniform synthesis of 4-inch wafer-scale MoS2 thin films by thermal decomposition of solution precursors. The solar cells are fabricated by transferring n-MoS2 thin films on p-Si substrates to form p-n heterojunctions and then transferring Au nanomeshes prepared in a novel surface treatment as transparent top electrodes onto MoS2. The circular n-MoS2/p-Si heterojunction solar cell exhibited a power conversion efficiency of 5.96% at a diameter of 0.3 in. and proved to be easily scalable to 1-inch diameter with 5.18% efficiency. To the best of our knowledge, the solar cells of this study are the most efficient and the largest in all types of solar cells based on TMDC reported so far. Finally, based on finite difference time-domain simulation, we proposed a strategy for implementing n-MoS2/p-Si heterojunction solar cell with efficiency higher than 15% by introducing optimal doping control of n-MoS2 and efficient anti-reflection layers.
Publisher
Elsevier BV
ISSN
2211-2855
Keyword (Author)
Two-dimensional transition-metal dichalcogenidesTransparent electrodesHeterojunctionLarge area synthesis
Keyword
CHEMICAL-VAPOR-DEPOSITIONLAYER MOS22-DIMENSIONAL MATERIALSMONOLAYER MOS2SINGLE-LAYERTHIN-FILMHETEROSTRUCTURESPERFORMANCESUBSTRATENANOWIRES

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