Correlation between thermal annealing temperature and Joule-heating based insulator-metal transition in VO2 nanobeams

Abstract

Rapid thermal annealing of VO2 nanobeams in an ambient argon environment has been carried out at various temperatures after device fabrication. Our analysis revealed that increasing the annealing temperature from 200°C to 400°C results in the reduction of both ohmic and nanobeam resistances with an appreciable decrease in joule-heating based transition voltage and transition temperature, while samples annealed at 500°C exhibited a conducting rutile-phase like characteristics at room temperature. In addition, these variation trends were explored using a physical model and the results were found to be in agreement with the observed results, thus verifying the model.