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In situ edge engineering in two-dimensional transition metal dichalcogenides

Author(s)
Sang, XiahanLi, XufanZhao, WenDong, JichenRouleau, Christopher M.Geohegan, David B.Ding, FengXiao, KaiUnocic, Raymond R.
Issued Date
2018-05
DOI
10.1038/s41467-018-04435-x
URI
https://scholarworks.unist.ac.kr/handle/201301/24191
Fulltext
https://www.nature.com/articles/s41467-018-04435-x
Citation
NATURE COMMUNICATIONS, v.9, pp.2051
Abstract
Exerting synthetic control over the edge structure and chemistry of two-dimensional (2D) materials is of critical importance to direct the magnetic, optical, electrical, and catalytic properties for specific applications. Here, we directly image the edge evolution of pores in Mo1-xWxSe2 monolayers via atomic-resolution in situ scanning transmission electron microscopy (STEM) and demonstrate that these edges can be structurally transformed to theoretically predicted metastable atomic configurations by thermal and chemical driving forces. Density functional theory calculations and ab initio molecular dynamics simulations explain the observed thermally induced structural evolution and exceptional stability of the four most commonly observed edges based on changing chemical potential during thermal annealing. The coupling of modeling and in situ STEM imaging in changing chemical environments demonstrated here provides a pathway for the predictive and controlled atomic scale manipulation of matter for the directed synthesis of edge configurations in Mo-1_xWxSe2 to achieve desired functionality.
Publisher
NATURE PUBLISHING GROUP
ISSN
2041-1723
Keyword
CHEMICAL-VAPOR-DEPOSITIONCONTROLLED GROWTHMAGNETIC-PROPERTIESMOS2 TRANSISTORSGRAIN-BOUNDARYZIGZAG EDGESGRAPHENENANORIBBONSMONOLAYERSDISULFIDE

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