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BielawskiChristopher W

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Atomic-Layer Deposition of Single-Crystalline BeO Epitaxially Grown on GaN Substrates

Author(s)
Lee, Seung MinYum, Jung HwanYoon, SeonnoLarsen, Eric S.Lee, Woo ChulKim, Seong KeunShervin, ShahabWang, WeijieRyou, Jae-HyunBielawski, Christopher W.Oh, Jungwoo
Issued Date
2017-12
DOI
10.1021/acsami.7b13487
URI
https://scholarworks.unist.ac.kr/handle/201301/23151
Fulltext
http://pubs.acs.org/doi/10.1021/acsami.7b13487
Citation
ACS APPLIED MATERIALS & INTERFACES, v.9, no.48, pp.41973 - 41979
Abstract
We have grown a single-crystal beryllium oxide (BeO) thin film on a gallium nitride (GaN) substrate by atomic-layer deposition (ALD) for the first time. BeO has a higher thermal conductivity, bandgap energy, and dielectric constant than SiO2. As an electrical insulator, diamond is the only material on earth whose thermal conductivity exceeds that of BeO. Despite these advantages, there is no chemical-vapor-deposition technique for BeO-thin-film deposition, and thus, it is not used in nanoscale-semiconductor-device processing. In this study, the BeO thin films grown on a GaN substrate with a single crystal showed excellent interface and thermal stability. Transmission electron microscopy showed clear diffraction patterns, and the Raman shifts associated with soft phonon modes verified the high thermal conductivity. The X-ray scan confirmed the out-of-plane single-crystal growth direction and the in-plane, 6-fold, symmetrical wurtzite structure. Single-crystalline BeO was grown on GaN despite the large lattice mismatch, which suggested a model that accommodated the strain of hexagonal-on-hexagonal epitaxy with 5/6 and 6/7 domain matching. BeO has a good dielectric constant and good thermal conductivity, bandgap energy, and single-crystal characteristics, so it is suitable for the gate dielectric of power semiconductor devices. The capacitance-voltage (C-V) results of BeO on a GaN-metal-oxide semiconductor exhibited low frequency dispersion, hysteresis, and interface-defect density.
Publisher
AMER CHEMICAL SOC
ISSN
1944-8244
Keyword (Author)
beryllium oxidegallium nitrideatomic-layer depositiondomain-matching epitaxypower devices
Keyword
ELECTRON-MOBILITY TRANSISTORSALGAN/GAN HEMTSTHERMAL-CONDUCTIVITYGATE LEAKAGEMOS-HEMTPERFORMANCEDENSITYOXIDESIPASSIVATION

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