There are no files associated with this item.
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 339 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 335 | - |
dc.citation.title | CURRENT APPLIED PHYSICS | - |
dc.citation.volume | 18 | - |
dc.contributor.author | Jin, Hanbyul | - |
dc.contributor.author | Lee, Jung-Yong | - |
dc.contributor.author | Kim, Junhyung | - |
dc.contributor.author | Jung, Sungchul | - |
dc.contributor.author | Mo, Kyuhyung | - |
dc.contributor.author | Park, Kibog | - |
dc.date.accessioned | 2023-12-21T21:08:20Z | - |
dc.date.available | 2023-12-21T21:08:20Z | - |
dc.date.created | 2017-12-27 | - |
dc.date.issued | 2018-03 | - |
dc.description.abstract | It is demonstrated experimentally that graphene can form on the surface of an amorphous SiC film by irradiating electron beam (e-beam) at low acceleration voltage. As the electron irradiation fluency increases, the crystallinity and uniformity of graphene improve, which is confirmed by the changes of the measured Raman spectra and secondary electron microscopy images. Due to the shallow penetration depth of e-beam with low acceleration voltage, only the region near the surface of SiC film will be heated by the thermalization of irradiated electrons with multiple scattering processes. The thermalized electrons are expected to weaken the bond strength between Si and C atoms so that the thermal agitation required for triggering the sublimation of Si atoms decreases. With these assistances of irradiated electrons, it is considered that graphene can grow on the surface of SiC film at temperature reduced substantially in comparison with the conventional vacuum annealing process. | - |
dc.identifier.bibliographicCitation | CURRENT APPLIED PHYSICS, v.18, no.3, pp.335 - 339 | - |
dc.identifier.doi | 10.1016/j.cap.2017.12.013 | - |
dc.identifier.issn | 1567-1739 | - |
dc.identifier.scopusid | 2-s2.0-85039944374 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/23109 | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S156717391730353X | - |
dc.identifier.wosid | 000424320500010 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE BV | - |
dc.title | Formation of Graphene on Amorphous SiC Film by Surface-Confined Heating with Electron Beam Irradiation | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary; Physics, Applied | - |
dc.identifier.kciid | ART002320675 | - |
dc.relation.journalResearchArea | Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | Electron beam irradiation | - |
dc.subject.keywordAuthor | Amorphous silicon carbide film | - |
dc.subject.keywordAuthor | Surface-confined heating | - |
dc.subject.keywordAuthor | Transparent electrode | - |
dc.subject.keywordPlus | FEW-LAYER GRAPHENE | - |
dc.subject.keywordPlus | SILICON-CARBIDE | - |
dc.subject.keywordPlus | GAS | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Tel : 052-217-1404 / Email : scholarworks@unist.ac.kr
Copyright (c) 2023 by UNIST LIBRARY. All rights reserved.
ScholarWorks@UNIST was established as an OAK Project for the National Library of Korea.