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DC Field | Value | Language |
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dc.citation.number | 39 | - |
dc.citation.startPage | 1606433 | - |
dc.citation.title | ADVANCED MATERIALS | - |
dc.citation.volume | 29 | - |
dc.contributor.author | Qu, Deshun | - |
dc.contributor.author | Liu, Xiaochi | - |
dc.contributor.author | Huang, Ming | - |
dc.contributor.author | Lee, Changmin | - |
dc.contributor.author | Ahmed, Faisal | - |
dc.contributor.author | Kim, Hyoungsub | - |
dc.contributor.author | Ruoff, Rodney S. | - |
dc.contributor.author | Hone, James | - |
dc.contributor.author | Yoo, Won Jong | - |
dc.date.accessioned | 2023-12-21T21:41:13Z | - |
dc.date.available | 2023-12-21T21:41:13Z | - |
dc.date.created | 2017-11-06 | - |
dc.date.issued | 2017-10 | - |
dc.description.abstract | A systematic modulation of the carrier type in molybdenum ditelluride (MoTe2) field-effect transistors (FETs) is described, through rapid thermal annealing (RTA) under a controlled O-2 environment (p-type modulation) and benzyl viologen (BV) doping (n-type modulation). Al2O3 capping is then introduced to improve the carrier mobilities and device stability. MoTe2 is found to be ultrasensitive to O-2 at elevated temperatures (250 degrees C). Charge carriers of MoTe2 flakes annealed via RTA at various vacuum levels are tuned between predominantly pristine n-type ambipolar, symmetric ambipolar, unipolar p-type, and degenerate-like p-type. Changes in the MoTe2-transistor performance are confirmed to originate from the physical and chemical absorption and dissociation of O-2, especially at tellurium vacancy sites. The electron branch is modulated by varying the BV dopant concentrations and annealing conditions. Unipolar n-type MoTe2 FETs with a high on-off ratio exceeding 10(6) are achieved under optimized doping conditions. By introducing Al2O3 capping, carrier field effect mobilities (41 for holes and 80 cm(2) V-1 s(-1) for electrons) and device stability are improved due to the reduced trap densities and isolation from ambient air. Lateral MoTe2 p-n diodes with an ideality factor of 1.2 are fabricated using the p- and n-type doping technique to test the superb potential of the doping method in functional electronic device applications. | - |
dc.identifier.bibliographicCitation | ADVANCED MATERIALS, v.29, no.39, pp.1606433 | - |
dc.identifier.doi | 10.1002/adma.201606433 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.scopusid | 2-s2.0-85028317165 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/22911 | - |
dc.identifier.url | http://onlinelibrary.wiley.com/doi/10.1002/adma.201606433/abstract | - |
dc.identifier.wosid | 000412925600024 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Carrier-Type Modulation and Mobility Improvement of Thin MoTe2 | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | controllable doping | - |
dc.subject.keywordAuthor | mobility improvement | - |
dc.subject.keywordAuthor | MoTe2 | - |
dc.subject.keywordAuthor | unipolar transistors | - |
dc.subject.keywordPlus | METAL-INSULATOR-TRANSITION | - |
dc.subject.keywordPlus | LAYER-DEPOSITED AL2O3 | - |
dc.subject.keywordPlus | BAND-GAP | - |
dc.subject.keywordPlus | MOLYBDENUM-DISULFIDE | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | ALPHA-MOTE2 | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | BLACK PHOSPHORUS TRANSISTORS | - |
dc.subject.keywordPlus | MULTILAYER MOS2 TRANSISTOR | - |
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