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Ruoff, Rodney S.
Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Next generation carbons, ultrathin sp3-bonded carbon sheets, negative curvature (‘Schwartzites’) carbons, sp3/sp2 hybrid carbon materials, model compounds for novel carbon materials, reaction mechanisms

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Carrier-Type Modulation and Mobility Improvement of Thin MoTe2

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Title
Carrier-Type Modulation and Mobility Improvement of Thin MoTe2
Author
Qu, DeshunLiu, XiaochiHuang, MingLee, ChangminAhmed, FaisalKim, HyoungsubRuoff, Rodney S.Hone, JamesYoo, Won Jong
Issue Date
201710
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.29, no.39, pp.1606433 -
Abstract
A systematic modulation of the carrier type in molybdenum ditelluride (MoTe2) field-effect transistors (FETs) is described, through rapid thermal annealing (RTA) under a controlled O-2 environment (p-type modulation) and benzyl viologen (BV) doping (n-type modulation). Al2O3 capping is then introduced to improve the carrier mobilities and device stability. MoTe2 is found to be ultrasensitive to O-2 at elevated temperatures (250 degrees C). Charge carriers of MoTe2 flakes annealed via RTA at various vacuum levels are tuned between predominantly pristine n-type ambipolar, symmetric ambipolar, unipolar p-type, and degenerate-like p-type. Changes in the MoTe2-transistor performance are confirmed to originate from the physical and chemical absorption and dissociation of O-2, especially at tellurium vacancy sites. The electron branch is modulated by varying the BV dopant concentrations and annealing conditions. Unipolar n-type MoTe2 FETs with a high on-off ratio exceeding 10(6) are achieved under optimized doping conditions. By introducing Al2O3 capping, carrier field effect mobilities (41 for holes and 80 cm(2) V-1 s(-1) for electrons) and device stability are improved due to the reduced trap densities and isolation from ambient air. Lateral MoTe2 p-n diodes with an ideality factor of 1.2 are fabricated using the p- and n-type doping technique to test the superb potential of the doping method in functional electronic device applications.
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DOI
http://dx.doi.org/10.1002/adma.201606433
ISSN
0935-9648
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