BROWSE

Related Researcher

Author

Jeong, Hu Young
UNIST Central Research Facilities (UCRF)
Research Interests
  • Soft material characterization such as graphene using a low kV Cs-corrected TEM

ITEM VIEW & DOWNLOAD

Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS2/WS2 van der Waals Heterobilayer

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS2/WS2 van der Waals Heterobilayer
Author
Pak, SangyeonLee, JuwonLee, Young-WooJang, A-RangAhn, SeongjoonMa, Kyung YeolCho, YuljaeHong, JohnLee, SanghyoJeong, Hu YoungIm, HyunsikShin, Hyeon SukMorris, Stephen M.Cha, SeungNamSohn, Jung InnKim, Jong Min
Keywords
band gap transition; interlayer interactions; MoS2/WS2; strain engineering; van der Waals heterostructures
Issue Date
201709
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.17, no.9, pp.5634 - 5640
Abstract
van der Waals heterostructures composed of two different monolayer crystals have recently attracted attention as a powerful and versatile platform for studying fundamental physics, as well as having great potential in future functional devices because of the diversity in the band alignments and the unique interlayer coupling that occurs at the heterojunction interface. However, despite these attractive features, a fundamental understanding of the underlying physics accounting for the effect of interlayer coupling on the interactions between electrons, photons, and phonons in the stacked heterobilayer is still lacking. Here, we demonstrate a detailed analysis of the strain-dependent excitonic behavior of an epitaxially grown MoS2/WS2 vertical heterostructure under uniaxial tensile and compressive strain that enables the interlayer interactions to be modulated along with the electronic band structure. We find that the strain-modulated interlayer coupling directly affects the characteristic combined vibrational and excitonic properties of each monolayer in the heterobilayer. It is further revealed that the relative photoluminescence intensity ratio of WS2 to MoS2 in our heterobilayer increases monotonically with tensile strain and decreases with compressive strain. We attribute the strain-dependent emission behavior of the heterobilayer to the modulation of the band structure for each monolayer, which is dictated by the alterations in the band gap transitions. These findings present an important pathway toward designing heterostructures and flexible devices.
URI
Go to Link
DOI
http://dx.doi.org/10.1021/acs.nanolett.7b02513
ISSN
1530-6984
Appears in Collections:
SNS_Journal Papers
UCRF_Journal Papers

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU