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Ruoff, Rodney S.
Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Next generation carbons, ultrathin sp3-bonded carbon sheets, negative curvature (‘Schwartzites’) carbons, sp3/sp2 hybrid carbon materials, model compounds for novel carbon materials, reaction mechanisms

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Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

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Title
Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil
Author
Xu, XiaozhiZhang, ZhihongDong, JichenYi, DingNiu, JingjingWu, MuhongLin, LiYin, RongkangLi, MingqiangZhou, JingyuanWang, ShaoxinSun, JunliangDuan, XiaojieGao, PengJiang, YingWu, XiaosongPeng, HailinRuoff, Rodney S.Liu, ZhongfanYu, DapengWang, EngeDing, FengLiu, Kaihui
Keywords
Single-crystal; Industrial Cu; Graphene; Ultrafast; Epitaxial
Issue Date
201708
Publisher
SCIENCE PRESS
Citation
SCIENCE BULLETIN, v.62, no.15, pp.1074 - 1080
Abstract
A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of (5 × 50) cm2 dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(1 1 1) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to ∼23,000 cm2 V−1 s−1 at 4 K and room temperature sheet resistance of ∼230 Ω/□. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost.
URI
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DOI
http://dx.doi.org/10.1016/j.scib.2017.07.005
ISSN
2095-9273
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