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dc.citation.startPage 7152 -
dc.citation.title SCIENTIFIC REPORTS -
dc.citation.volume 7 -
dc.contributor.author Han, Sang Wook -
dc.contributor.author Cha, Gi-Beom -
dc.contributor.author Park, Youngsin -
dc.contributor.author Hong, S. C. -
dc.date.accessioned 2023-12-21T22:06:33Z -
dc.date.available 2023-12-21T22:06:33Z -
dc.date.created 2017-08-26 -
dc.date.issued 2017-08 -
dc.description.abstract We provide a new insight that the sulphur-depleted MoS2 surface can store hydrogen gas at room temperature. Our findings reveal that the sulphur-vacancy defects preferentially serve as active sites for both hydrogen chemisorption and physisorption. Unexpectedly the sulphur vacancy instantly dissociates the H-2 molecules and strongly binds the split hydrogen at the exposed Mo atoms. Thereon the additional H-2 molecule is adsorbed with enabling more hydrogen physisorption on the top sites around the sulphur vacancy. Furthermore, the increase of the sulphur vacancy on the MoS2 surface further activates the dissociative hydrogen chemisorption than the H-2 physisorption. -
dc.identifier.bibliographicCitation SCIENTIFIC REPORTS, v.7, pp.7152 -
dc.identifier.doi 10.1038/s41598-017-07178-9 -
dc.identifier.issn 2045-2322 -
dc.identifier.scopusid 2-s2.0-85026865729 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/22598 -
dc.identifier.url https://www.nature.com/articles/s41598-017-07178-9 -
dc.identifier.wosid 000406816300025 -
dc.language 영어 -
dc.publisher NATURE PUBLISHING GROUP -
dc.title Hydrogen physisorption based on the dissociative hydrogen chemisorption at the sulphur vacancy of MoS2 surface -
dc.type Article -
dc.description.isOpenAccess TRUE -
dc.relation.journalWebOfScienceCategory Multidisciplinary Sciences -
dc.relation.journalResearchArea Science & Technology - Other Topics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordPlus ACTIVE EDGE SITES -
dc.subject.keywordPlus EVOLUTION REACTION -
dc.subject.keywordPlus STORAGE MATERIALS -
dc.subject.keywordPlus MONOLAYER MOS2 -
dc.subject.keywordPlus 1ST-PRINCIPLES -
dc.subject.keywordPlus ADSORPTION -
dc.subject.keywordPlus DEFECTS -
dc.subject.keywordPlus PLANE -

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