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DC Field | Value | Language |
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dc.citation.endPage | 4925 | - |
dc.citation.number | 7 | - |
dc.citation.startPage | 4920 | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 17 | - |
dc.contributor.author | Kim, Ka-Hyun | - |
dc.contributor.author | Johnson, Erik V. | - |
dc.contributor.author | Cabarrocas, Pere Roca I. | - |
dc.date.accessioned | 2023-12-21T22:08:40Z | - |
dc.date.available | 2023-12-21T22:08:40Z | - |
dc.date.created | 2017-05-22 | - |
dc.date.issued | 2017-07 | - |
dc.description.abstract | Hydrogenated polymorphous silicon (pm-Si:H) is a material consisting of a small volume fraction of nanocrystals embedded in an amorphous matrix, and which can be grown at high deposition rates by increasing the radio-frequency power. When grown at high deposition rates, pm-Si:H films show a shift of their infrared (IR) absorption stretching band peak to higher wavenumbers and a sudden increase in their optical bandgap. The IR absorption spectrum was analyzed by deconvolution into three bands, including a medium stretching mode positioned at 2030 cm-1, which has been attributed to Si-H bonds at silicon nanocrystal surfaces. Secondary ion mass spectrometry measurements confirmed that an excess of hydrogen is incorporated in pm-Si:H grown at high deposition rate, leading to a sharp increase in the optical bandgap. We suggest that this sharp increase can be used as a simple tool to detect the deterioration of material quality when using high deposition rate processes. | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.7, pp.4920 - 4925 | - |
dc.identifier.doi | 10.1166/jnn.2017.14281 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.scopusid | 2-s2.0-85018562243 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21965 | - |
dc.identifier.url | http://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000007/art00068 | - |
dc.identifier.wosid | 000402487200068 | - |
dc.language | 영어 | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Evolution of microstructure and incorporation of excess hydrogen during the growth of hydrogenated polymorphous silicon at high rate | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter | - |
dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science; Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | :IR Absorption | - |
dc.subject.keywordAuthor | Hydrogen | - |
dc.subject.keywordAuthor | Silicon Nanocrystal | - |
dc.subject.keywordAuthor | High Deposition Rate | - |
dc.subject.keywordAuthor | Diagnostics | - |
dc.subject.keywordPlus | AMORPHOUS-SILICON | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | SPECTRA | - |
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