Full metadata record
DC Field | Value | Language |
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dc.citation.startPage | 46422 | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 7 | - |
dc.contributor.author | Park, Young Ran | - |
dc.contributor.author | Jeong, Hu Young | - |
dc.contributor.author | Seo, Young Soo | - |
dc.contributor.author | Choi, Won Kook | - |
dc.contributor.author | Hong, Young Joon | - |
dc.date.accessioned | 2023-12-21T22:20:19Z | - |
dc.date.available | 2023-12-21T22:20:19Z | - |
dc.date.created | 2017-05-08 | - |
dc.date.issued | 2017-04 | - |
dc.description.abstract | Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Forster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and - resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices. | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.7, pp.46422 | - |
dc.identifier.doi | 10.1038/srep46422 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.scopusid | 2-s2.0-85017409127 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21915 | - |
dc.identifier.url | https://www.nature.com/articles/srep46422 | - |
dc.identifier.wosid | 000398992700001 | - |
dc.language | 영어 | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer | - |
dc.type | Article | - |
dc.description.isOpenAccess | TRUE | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | FUNCTIONAL-GROUPS | - |
dc.subject.keywordPlus | WORK FUNCTION | - |
dc.subject.keywordPlus | GREEN LUMINESCENCE | - |
dc.subject.keywordPlus | DEEP-ULTRAVIOLET | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | ORIGIN | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | MECHANISM | - |
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