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Kim, So Youn
Laboratory for Soft Materials Nanophysics
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Controlled Segmentation of Metal Nanowire Array by Block Copolymer Lithography and Reversible Ion Loading

Author(s)
Mun, Jeong HoCha, Seung KeunKim, Ye ChanYun, TaeyeongChoi, Young JooJin, Hyeong MinLee, Jae EunJeon, Hyun UkKim, So YounKim, Sang Ouk
Issued Date
2017-05
DOI
10.1002/smll.201603939
URI
https://scholarworks.unist.ac.kr/handle/201301/21687
Fulltext
http://onlinelibrary.wiley.com/doi/10.1002/smll.201603939/abstract
Citation
SMALL, v.13, no.17, pp.1603939
Abstract
Spatial arrangement of 1D nanomaterials may offer enormous opportunities for advanced electronics and photonics. Moreover, morphological complexity and chemical diversity in the nanoscale components may lead to unique properties that are hardly anticipated in randomly distributed homogeneous nanostructures. Here, controlled chemical segmentation of metal nanowire arrays using block copolymer lithography and subsequent reversible metal ion loading are demonstrated. To impose chemical heterogeneity in the nanowires generated by block copolymer lithography, reversible ion loading method highly specific for one particular polymer block is introduced. Reversibility of the metal ion loading enables area-selective localized replacement of metal ions in the self-assembled patterns and creates segmented metal nanowire arrays with different metallic components. Further integration of this method with shear aligning process produces high aligned segmented metal nanowire array with desired local chemical compositions.
Publisher
WILEY-V C H VERLAG GMBH
ISSN
1613-6810
Keyword
ORDERED ARRAYSTHIN-FILMSGRAPHOEPITAXYTEMPLATESNANOSTRUCTURESFABRICATIONALIGNMENTSURFACES

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