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김학선

Kim, Hak Sun
Internet of Things System Lab.
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A 1.8-GHz CMOS power amplifier using a dual-primary transformer with improved efficiency in the low power region

Author(s)
Park, ChangkunHan, JeonghuKim, HaksunHong, Songcheol
Issued Date
2008-04
DOI
10.1109/TMTT.2008.918152
URI
https://scholarworks.unist.ac.kr/handle/201301/21542
Fulltext
http://ieeexplore.ieee.org/document/4460584/
Citation
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.56, no.4, pp.782 - 792
Abstract
A 1.8-GHz CMOS power amplifier for a polar transmitter is implemented with a 0.18-mu m RF CMOS process. The matching components, including the input and output transformers, were integrated. A dual-primary transformer is proposed in order to increase the efficiency in the low power region of the amplifier. The loss induced by the matching network for the low-output power region is minimized using the dual-primary transformer. The amplifier achieved a power-added efficiency of 40.7% at a maximum output power of 31.6 dBm. The dynamic range was 34 dB for a supply voltage that ranged from 0.5 to 3.3 V. The low power efficiency was 32% at the output power of 16 dBm.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
ISSN
0018-9480
Keyword (Author)
class-Edynamic rangeglobal system for mobile communication (GSM)load impedancemode lockingpolar transmittertransformervariable load
Keyword
POLAR TRANSMITTERCDMA

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