BROWSE

Related Researcher

Author

Ding, Feng
IBS - Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Theoretical methods development for materials studies.

ITEM VIEW & DOWNLOAD

Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition

Cited 0 times inthomson ciCited 0 times inthomson ci
Title
Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition
Author
Song, XiujuGan, TengNie, YufengZhuang, JianingSun, JingyuMa, DonglinShi, JianpingLin, YuanweiDing, FengZhang, YanfengLiu, Zhongfan
Keywords
characterizations;  controllable growth;  chemical vapor deposition;  Graphene and hexagonal boron nitride heterostructures;  seed-assisted growth
Issue Date
201610
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.16, no.10, pp.6109 - 6116
Abstract
Vertical heterostructures based on two-dimensional layered materials, such as stacked graphene and hexagonal boron nitride (G/h-BN), have stimulated wide interest in fundamental physics, material sciences and nanoelectronics. To date, it still remains challenging to obtain high quality G/h-BN heterostructures concurrently with controlled nucleation density and thickness uniformity. In this work, with the aid of the well-defined poly(methyl methacrylate) seeds, effective control over the nucleation densities and locations of graphene domains on the predeposited h-BN monolayers was realized, leading to the formation of patterned G/h-BN arrays or continuous films. Detailed spectroscopic and morphological characterizations further confirmed that 435.7% of such monolayer graphene domains were of single-crystalline nature with their domain sizes predetermined throughout seed interspacing. Density functional theory calculations suggested that a self-terminated growth mechanism can be applied for the related graphene growth on h-BN/Cu. In turn, as constructed field-effect transistor arrays based on such synthesized single-crystalline G/h-BN patterning were found to be compatible with fabricating devices with nice and steady performance, hence holding great promise for the development of next generation graphene-based electronics.
URI
Go to Link
DOI
http://dx.doi.org/10.1021/acs.nanolett.6b02279
ISSN
1530-6984
Appears in Collections:
MSE_Journal Papers
Files in This Item:
There are no files associated with this item.

find_unist can give you direct access to the published full text of this article. (UNISTARs only)

Show full item record

qr_code

  • mendeley

    citeulike

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

MENU