Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors
- Author(s)
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Chang, Jiwon, Register, Leonard F., Banerjee, Sanjay K.
- Issued Date
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2014-02
- DOI
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10.1063/1.4866872
- URI
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https://scholarworks.unist.ac.kr/handle/201301/21323
- Fulltext
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http://aip.scitation.org/doi/10.1063/1.4866872
- Citation
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JOURNAL OF APPLIED PHYSICS, v.115, no.8, pp.084506
- Abstract
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We study the transport properties of monolayer MX2 (M = Mo, W; X = S, Se, Te) n- and p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) using full-band ballistic non-equilibrium Green's function simulations with an atomistic tight-binding Hamiltonian with hopping potentials obtained from density functional theory. We discuss the subthreshold slope, drain-induced barrier lowering (DIBL), as well as gate-induced drain leakage (GIDL) for different monolayer MX2 MOSFETs. We also report the possibility of negative differential resistance behavior in the output characteristics of nanoscale monolayer MX2 MOSFETs.
- Publisher
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AMER INST PHYSICS
- ISSN
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0021-8979
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