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DC Field | Value | Language |
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dc.citation.number | 1 | - |
dc.citation.startPage | 014006 | - |
dc.citation.title | 2D MATERIALS | - |
dc.citation.volume | 4 | - |
dc.contributor.author | Park, Young Woon | - |
dc.contributor.author | Jerng, Sahng-Kyoon | - |
dc.contributor.author | Jeon, Jae Ho | - |
dc.contributor.author | Roy, Sanjib Baran | - |
dc.contributor.author | Akbar, Kamran | - |
dc.contributor.author | Kim, Jeong | - |
dc.contributor.author | Sim, Yumin | - |
dc.contributor.author | Seong, Maeng-Je | - |
dc.contributor.author | Kim, Jung Hwa | - |
dc.contributor.author | Lee, Zonghoon | - |
dc.contributor.author | Kim, Minju | - |
dc.contributor.author | Yi, Yeonjin | - |
dc.contributor.author | Kim, Jinwoo | - |
dc.contributor.author | Noh, Do Young | - |
dc.contributor.author | Chun, Seung-Hyun | - |
dc.date.accessioned | 2023-12-21T22:38:26Z | - |
dc.date.available | 2023-12-21T22:38:26Z | - |
dc.date.created | 2017-02-03 | - |
dc.date.issued | 2017-03 | - |
dc.description.abstract | The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210 degrees C-370 degrees C. The surface consists of a mixture of Nand (N +/- 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (+/- 0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of similar to 100 nm and clear Moire patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm(2) V-1 s(-1) and 6.7 cm(2) V-1 s(-1) for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials. | - |
dc.identifier.bibliographicCitation | 2D MATERIALS, v.4, no.1, pp.014006 | - |
dc.identifier.doi | 10.1088/2053-1583/aa51a2 | - |
dc.identifier.issn | 2053-1583 | - |
dc.identifier.scopusid | 2-s2.0-85014504937 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/21311 | - |
dc.identifier.url | http://iopscience.iop.org/article/10.1088/2053-1583/aa51a2/meta | - |
dc.identifier.wosid | 000391613000001 | - |
dc.language | 영어 | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | molecular beam epitaxy | - |
dc.subject.keywordAuthor | van der Waals epitaxy | - |
dc.subject.keywordAuthor | SnSe2 | - |
dc.subject.keywordAuthor | Raman spectroscopy | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordPlus | DER-WAALS EPITAXY | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | LAYERED SEMICONDUCTORS | - |
dc.subject.keywordPlus | MOS2 TRANSISTORS | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | HETEROJUNCTIONS | - |
dc.subject.keywordPlus | TRANSITION | - |
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