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Author

Lee, Zonghoon
Atomic-Scale Electron Microscopy (ASEM) Lab
Research Interests
  • Advanced Transmission Electron Microscopy (TEM/STEM), in Situ TEM, graphene, 2D materials, low-dimensional crystals, nanostructured materials

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Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation

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Title
Molecular beam epitaxy of large-area SnSe2 with monolayer thickness fluctuation
Author
Park, Young WoonJerng, Sahng-KyoonJeon, Jae HoRoy, Sanjib BaranAkbar, KamranKim, JeongSim, YuminSeong, Maeng-JeKim, Jung HwaLee, ZonghoonKim, MinjuYi, YeonjinKim, JinwooNoh, Do YoungChun, Seung-Hyun
Keywords
molecular beam epitaxy; van der Waals epitaxy; SnSe2; Raman spectroscopy; transmission electron microscopy; field effect transistor
Issue Date
201703
Publisher
IOP PUBLISHING LTD
Citation
2D MATERIALS, v.4, no.1, pp.014006 -
Abstract
The interest in layered materials is largely based on the expectation that they will be beneficial for a variety of applications, from low-power-consuming, wearable electronics to energy harvesting. However, the properties of layered materials are highly dependent on thickness, and the difficulty of controlling thickness over a large area has been a bottleneck for commercial applications. Here, we report layer-by-layer growth of SnSe2, a layered semiconducting material, via van der Waals epitaxy. The films were fabricated on insulating mica substrates with substrate temperatures in the range of 210 degrees C-370 degrees C. The surface consists of a mixture of Nand (N +/- 1) layers, showing that the thickness of the film can be defined with monolayer accuracy (+/- 0.6 nm). High-resolution transmission electron microscopy reveals a polycrystalline film with a grain size of similar to 100 nm and clear Moire patterns from overlapped grains with similar thickness. We also report field effect mobility values of 3.7 cm(2) V-1 s(-1) and 6.7 cm(2) V-1 s(-1) for 11 and 22 nm thick SnSe2, respectively. SnSe2 films with customizable thickness can provide valuable platforms for industry and academic researchers to fully exploit the potential of layered materials.
URI
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DOI
http://dx.doi.org/10.1088/2053-1583/aa51a2
ISSN
2053-1583
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