File Download
There are no files associated with this item.
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Jeong, Hu Young
- UCRF Electron Microscopy group
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer
- Author(s)
- Yoon, Hoon Hahn, Jung, Sungchul, Choi, Gahyun, Kim, Junhyung, Jeon, Youngeun, Kim, Yong Soo, Jeong, Hu Young, Kim, Kwanpyo, Kwon, Soon-Yong, Park, Kibog
- Issued Date
- 2017-01
- Citation
- NANO LETTERS, v.17, no.1, pp.44 - 49
- Abstract
- We report the systematic experimental studies demonstrating that a graphene layer inserted at metal/n-Si(001) interface is efficient to explore interface Fermi-level pinning effect. It is confirmed that an inserted graphene layer prevents atomic interdiffusion to form an atomically abrupt Schottky contact. The Schottky barriers of metal/graphene/n-Si(001) junctions show a very weak dependence on metal work-function, implying that the metal Fermi-level is almost completely pinned at charge neutrality level close to the valence band edge of Si. The atomically impermeable and electronically transparent properties of graphene can be used generally to form an intact Schottky contact for all semiconductors.
- Publisher
- AMER CHEMICAL SOC
- ISSN
- 1530-6984
- Keyword (Author)
- Schottky barrier, graphene, diffusion barrier, intact interface, Fermi-level pinning, internal photoemission
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.