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Jun, Young Chul
Laboratory of Nanophotonics & Metamaterials (NanoMeta)
Research Interests
  • Nanophotonics, plasmonics, metamaterials, 4D printing, programmable matter, smart materials

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Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene

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Title
Atomic Scale Study on Growth and Heteroepitaxy of ZnO Monolayer on Graphene
Author
Hong, Hyo-KiJo, JunhyeonHwang, DaeyeonLee, JongyeongKim, Na YeonSon, SeungwooKim, Jung HwaJin, Mi-JinJun, Young ChulErni, RolfKwak, Sang KyuYoo, Jung-WooLee, Zonghoon
Keywords
2D materials; atomically thin; graphene; Heteroepitaxy; quantum confinement effect; ZnO monolayer
Issue Date
201701
Publisher
AMER CHEMICAL SOC
Citation
NANO LETTERS, v.17, no.1, pp.120 - 127
Abstract
Atomically thin semiconducting oxide on graphene carries a unique combination of wide band gap, high charge carrier mobility, and optical transparency, which can be widely applied for optoelectronics. However, study on the epitaxial formation and properties of oxide monolayer on graphene remains unexplored due to hydrophobic graphene surface and limits of conventional bulk deposition technique. Here, we report atomic scale study of heteroepitaxial growth and relationship of a single-atom-thick ZnO layer on graphene using atomic layer deposition. We demonstrate atom-by-atom growth of zinc and oxygen at the preferential zigzag edge of a ZnO monolayer on graphene through in situ observation. We experimentally determine that the thinnest ZnO monolayer has a wide band gap (up to 4.0 eV), due to quantum confinement and graphene-like structure, and high optical transparency. This study can lead to a new class of atomically thin two-dimensional heterostructures of semiconducting oxides formed by highly controlled epitaxial growth.
URI
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DOI
http://dx.doi.org/10.1021/acs.nanolett.6b03621
ISSN
1530-6984
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