Support-free transfer of ultrasmooth graphene films facilitated by self-Assembled monolayers for electronic devices and patterns
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- Support-free transfer of ultrasmooth graphene films facilitated by self-Assembled monolayers for electronic devices and patterns
- Wang, Bin; Huang, Ming; Tao, Li; Lee, Sun Hwa; Jang, A-Rang; Li, Bao-Wen; Shin, Hyeon Suk; Akinwande, Deji; Ruoff, Rodney S.
- GFET; graphene; pattern; self-assembled monolayer; support-free; transfer; ultrasmooth
- Issue Date
- AMER CHEMICAL SOC
- ACS NANO, v.10, no.1, pp.1404 - 1410
- We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-Assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm2/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces. © 2015 American Chemical Society
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