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Ruoff, Rodney S.
Center for Multidimensional Carbon Materials (CMCM)
Research Interests
  • Next generation carbons, ultrathin sp3-bonded carbon sheets, negative curvature (‘Schwartzites’) carbons, sp3/sp2 hybrid carbon materials, model compounds for novel carbon materials, reaction mechanisms

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Support-free transfer of ultrasmooth graphene films facilitated by self-Assembled monolayers for electronic devices and patterns

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Title
Support-free transfer of ultrasmooth graphene films facilitated by self-Assembled monolayers for electronic devices and patterns
Author
Wang, BinHuang, MingTao, LiLee, Sun HwaJang, A-RangLi, Bao-WenShin, Hyeon SukAkinwande, DejiRuoff, Rodney S.
Keywords
GFET; graphene; pattern; self-assembled monolayer; support-free; transfer; ultrasmooth
Issue Date
201601
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.10, no.1, pp.1404 - 1410
Abstract
We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-Assembled monolayer (F-SAM) modified substrates including SiO2/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm2/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces. © 2015 American Chemical Society
URI
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DOI
http://dx.doi.org/10.1021/acsnano.5b06842
ISSN
1936-0851
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