File Download
SFX Link
- Find it @ UNIST can give you direct access to the published full text of this article. (UNISTARs only)
- Jeong, Hu Young
- UCRF Electron Microscopy group
Views & Downloads
Detailed Information
Cited time in 
Cited time in 
Cited time in
Metadata Downloads
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.citation.number | 8 | - |
| dc.citation.startPage | 1600033 | - |
| dc.citation.title | ADVANCED SCIENCE | - |
| dc.citation.volume | 3 | - |
| dc.contributor.author | Chen, Jianyi | - |
| dc.contributor.author | Tang, Wei | - |
| dc.contributor.author | Tian, Bingbing | - |
| dc.contributor.author | Liu, Bo | - |
| dc.contributor.author | Zhao, Xiaoxu | - |
| dc.contributor.author | Liu, Yanpeng | - |
| dc.contributor.author | Ren, Tianhua | - |
| dc.contributor.author | Liu, Wei | - |
| dc.contributor.author | Geng, Dechao | - |
| dc.contributor.author | Jeong, Hu Young | - |
| dc.contributor.author | Shin, Hyeon Suk | - |
| dc.contributor.author | Zhau, Wu | - |
| dc.contributor.author | Loh, Kian Ping | - |
| dc.date.accessioned | 2023-12-21T23:36:26Z | - |
| dc.date.available | 2023-12-21T23:36:26Z | - |
| dc.date.created | 2016-06-08 | - |
| dc.date.issued | 2016-08 | - |
| dc.description.abstract | Large‐sized MoS2 crystals can be grown on SiO2/Si substrates via a two‐stage chemical vapor deposition method. The maximum size of MoS2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS2 crystals can reach ≈30 cm2 V−1 s−1, which is comparable to those of exfoliated flakes. | - |
| dc.identifier.bibliographicCitation | ADVANCED SCIENCE, v.3, no.8, pp.1600033 | - |
| dc.identifier.doi | 10.1002/advs.201600033 | - |
| dc.identifier.issn | 2198-3844 | - |
| dc.identifier.scopusid | 2-s2.0-84981550285 | - |
| dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/20735 | - |
| dc.identifier.url | http://onlinelibrary.wiley.com/doi/10.1002/advs.201600033/abstract | - |
| dc.identifier.wosid | 000384731000007 | - |
| dc.language | 영어 | - |
| dc.publisher | Wiley | - |
| dc.title | Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates | - |
| dc.type | Article | - |
| dc.description.isOpenAccess | TRUE | - |
| dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary | - |
| dc.relation.journalResearchArea | Chemistry; Science & Technology - Other Topics; Materials Science | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.subject.keywordAuthor | chemical vapor deposition | - |
| dc.subject.keywordAuthor | high quality | - |
| dc.subject.keywordAuthor | large size | - |
| dc.subject.keywordAuthor | molybdenum disulfide | - |
| dc.subject.keywordAuthor | silicon dioxide | - |
| dc.subject.keywordPlus | TRANSITION-METAL DICHALCOGENIDES | - |
| dc.subject.keywordPlus | MONOLAYER MOLYBDENUM-DISULFIDE | - |
| dc.subject.keywordPlus | SINGLE-LAYER MOS2 | - |
| dc.subject.keywordPlus | LARGE-AREA GROWTH | - |
| dc.subject.keywordPlus | EPITAXIAL-GROWTH | - |
| dc.subject.keywordPlus | ATOMIC LAYERS | - |
| dc.subject.keywordPlus | THIN-LAYERS | - |
| dc.subject.keywordPlus | GRAPHENE | - |
| dc.subject.keywordPlus | HETEROSTRUCTURES | - |
| dc.subject.keywordPlus | STRATEGY | - |
Items in Repository are protected by copyright, with all rights reserved, unless otherwise indicated.