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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 907 | - |
dc.citation.startPage | 899 | - |
dc.citation.title | JOURNAL OF ALLOYS AND COMPOUNDS | - |
dc.citation.volume | 689 | - |
dc.contributor.author | Jo, Seungki | - |
dc.contributor.author | Park, Sung Hoon | - |
dc.contributor.author | Ban, Hyeong Woo | - |
dc.contributor.author | Gu, Da Hwi | - |
dc.contributor.author | Kim, Bong-Seo | - |
dc.contributor.author | Son, Ji Hee | - |
dc.contributor.author | Hong, Hyo-Ki | - |
dc.contributor.author | Lee, Zonghoon | - |
dc.contributor.author | Han, Hyoung-Su | - |
dc.contributor.author | Jo, Wook | - |
dc.contributor.author | Lee, Ji Eun | - |
dc.contributor.author | Son, Jae Sung | - |
dc.date.accessioned | 2023-12-21T23:06:51Z | - |
dc.date.available | 2023-12-21T23:06:51Z | - |
dc.date.created | 2016-08-29 | - |
dc.date.issued | 2016-12 | - |
dc.description.abstract | Over the past decade, nanostructuring has become the core of thermoelectric (TE) material research because it creates numerous internal interfaces that provide an effective way to tune the electrical and/or thermal properties of TE materials. Herein, we report a synthesis of interface-engineered BiSbTe nanostructured TE materials by introducing chemically synthesized molecular Te-n(2-) polyanions into BiSbTe particles, from which BiSbTe nanostructured materials with high-density Te interfacial layers are prepared in thin films and sintered pellets. These Te layers form the contact potential well at the BiSbTe-Te junction to realize energy dependent carrier scattering and scatter phonons effectively, thus resulting in simultaneous improvement in the electrical and thermal properties to increase the ZT value well above 1.3 +/- 0.14 that is increased by 40% compared to bulk BiSbTe. The findings of current study can open up new chemical design spaces for interface-engineered electronic and TE materials. | - |
dc.identifier.bibliographicCitation | JOURNAL OF ALLOYS AND COMPOUNDS, v.689, pp.899 - 907 | - |
dc.identifier.doi | 10.1016/j.jallcom.2016.08.033 | - |
dc.identifier.issn | 0925-8388 | - |
dc.identifier.scopusid | 2-s2.0-84982131745 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/20420 | - |
dc.identifier.url | http://www.sciencedirect.com/science/article/pii/S0925838816324008 | - |
dc.identifier.wosid | 000384427200116 | - |
dc.language | 영어 | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Simultaneous improvement in electrical and thermal properties of interface-engineered BiSbTe nanostructured thermoelectric materials | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering | - |
dc.relation.journalResearchArea | Chemistry; Materials Science; Metallurgy & Metallurgical Engineering | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | Interface engineering | - |
dc.subject.keywordAuthor | Nanostructured thermoelectric materials | - |
dc.subject.keywordAuthor | Energy filtering effect | - |
dc.subject.keywordAuthor | Thermal conductivity | - |
dc.subject.keywordAuthor | ZT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | FIGURE | - |
dc.subject.keywordPlus | POWER | - |
dc.subject.keywordPlus | TELLURIUM | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | ALLOYS | - |
dc.subject.keywordPlus | MERIT | - |
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