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Lee, Zonghoon
Atomic-Scale Electron Microscopy Lab.
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dc.citation.endPage 117 -
dc.citation.startPage 109 -
dc.citation.title APPLIED SURFACE SCIENCE -
dc.citation.volume 387 -
dc.contributor.author Oh, Il-Kwon -
dc.contributor.author Yoo, Gilsang -
dc.contributor.author Yoon, Chang Mo -
dc.contributor.author Kim, Tae Hyung -
dc.contributor.author Yeom, Geun Young -
dc.contributor.author Kim, Kangsik -
dc.contributor.author Lee, Zonghoon -
dc.contributor.author Jung, Hanearl -
dc.contributor.author Lee, Chang Wan -
dc.contributor.author Kim, Hyungjun -
dc.contributor.author Lee, Han-Bo-Ram -
dc.date.accessioned 2023-12-21T23:08:47Z -
dc.date.available 2023-12-21T23:08:47Z -
dc.date.created 2016-07-18 -
dc.date.issued 2016-11 -
dc.description.abstract Although plasma-enhanced atomic layer deposition (PE-ALD) results in several benefits in the formation of high-k dielectrics, including a low processing temperature and improved film properties compared to conventional thermal ALD, energetic radicals and ions in the plasma cause damage to layer stacks, leading to the deterioration of electrical properties. In this study, the growth characteristics and film properties of PE-ALD Al2O3 were investigated using a very-high-frequency (VHF) plasma reactant. Because VHF plasma features a lower electron temperature and higher plasma density than conventional radio frequency (RF) plasma, it has a larger number of less energetic reaction species, such as radicals and ions. VHF PE-ALD Al2O3 shows superior physical and electrical properties over RF PE-ALD Al2O3, including high growth per cycle, excellent conformality, low roughness, high dielectric constant, low leakage current, and low interface trap density. In addition, interlayer-free Al2O3 on Si was achieved in VHF PE-ALD via a significant reduction in plasma damage. VHF PE-ALD will be an essential process to realize nanoscale devices that require precise control of interfaces and electrical properties. -
dc.identifier.bibliographicCitation APPLIED SURFACE SCIENCE, v.387, pp.109 - 117 -
dc.identifier.doi 10.1016/j.apsusc.2016.06.048 -
dc.identifier.issn 0169-4332 -
dc.identifier.scopusid 2-s2.0-84975887109 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/20068 -
dc.identifier.url http://www.sciencedirect.com/science/article/pii/S0169433216312752 -
dc.identifier.wosid 000381251100014 -
dc.language 영어 -
dc.publisher ELSEVIER SCIENCE BV -
dc.title Very high frequency plasma reactant for atomic layer deposition -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter -
dc.relation.journalResearchArea Chemistry; Materials Science; Physics -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor Very high frequency plasma source -
dc.subject.keywordAuthor Plasma-enhanced atomic layer deposition -
dc.subject.keywordAuthor Interlayer-free deposition -
dc.subject.keywordAuthor High-k dielectrics -
dc.subject.keywordAuthor Damage-free deposition -
dc.subject.keywordPlus CHEMICAL-VAPOR-DEPOSITION -
dc.subject.keywordPlus THIN-FILMS -
dc.subject.keywordPlus METAL-OXIDE -
dc.subject.keywordPlus ION CURRENT -
dc.subject.keywordPlus GROWTH -
dc.subject.keywordPlus AL2O3 -
dc.subject.keywordPlus ALD -
dc.subject.keywordPlus DENSITY -
dc.subject.keywordPlus DAMAGE -
dc.subject.keywordPlus CONFORMALITY -

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