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Author

Park, Jang-Ung
Flexible Nano-electronics & Biotechnology Lab
Research Interests
  • Wireless wearable electronics, flexible electronics, printed electronics, nano-bio interfaces

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Tin-doped indium oxide films for highly flexible transparent conducting electrodes

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Title
Tin-doped indium oxide films for highly flexible transparent conducting electrodes
Author
Park, Hee JungKim, JooheeWon, Jong HanChoi, Gyoung SoonLim, Yun TakShin, Jae SooPark, Jang-Ung
Keywords
Flexibility; ITO; Sheet resistance; Transparent conducting electrode
Issue Date
201609
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.615, no., pp.8 - 12
Abstract
With the recent growing interest in flexible electronics, many studies are being conducted on flexible transparent conducting electrodes (TCE) such as Ag nanowires, Ag nanomeshes, carbon nanotubes, and graphenes. However, it will take time for such technologies to replace Sn-doped In2O3 (ITO), which is now widely used, due to challenges with reliability, mass-production, cost, and industry infrastructure. In this study, ITO films with different thicknesses were deposited on a flexible polymer substrate to investigate their optical and electrical properties and flexibility as a function of film thickness. Regardless of thickness, the ITO films' transmittance was about 80% at ~ 550 nm wavelength. The sheet resistances of all films were below 100 Ω/sq although resistance increased with decreasing film thickness. As a result of bending tests, it was found that thinner films had a higher threshold against bending strain. The sheet resistances did not significantly change above a bending radius of ~ 5 mm. In particular, the 50 nm-thick ITO film endured to a bending radius of ~ 3 mm, showing that it is a viable transparent electrode for flexible optoelectronics.
URI
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DOI
http://dx.doi.org/10.1016/j.tsf.2016.06.040
ISSN
0040-6090
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