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DC Field | Value | Language |
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dc.citation.endPage | 6201 | - |
dc.citation.number | 21 | - |
dc.citation.startPage | 6197 | - |
dc.citation.title | ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | - |
dc.citation.volume | 55 | - |
dc.contributor.author | Han, Tae-Hee | - |
dc.contributor.author | Kwon, Sung-Joo | - |
dc.contributor.author | Li, Nannan | - |
dc.contributor.author | Seo, Hong-Kyu | - |
dc.contributor.author | Xu, Wentao | - |
dc.contributor.author | Kim, Kwang S. | - |
dc.contributor.author | Lee, Tae-Woo | - |
dc.date.accessioned | 2023-12-21T23:43:00Z | - |
dc.date.available | 2023-12-21T23:43:00Z | - |
dc.date.created | 2016-07-08 | - |
dc.date.issued | 2016-05 | - |
dc.description.abstract | We report effective solution-processed chemical p-type doping of graphene using trifluoromethanesulfonic acid (CF3SO3H, TFMS), that can provide essential requirements to approach an ideal flexible graphene anode for practical applications: i) high optical transmittance, ii) low sheet resistance (70% decrease), iii) high work function (0.83 eV increase), iv) smooth surface, and iv) air-stability at the same time. The TFMS-doped graphene formed nearly ohmic contact with a conventional organic hole transporting layer, and a green phosphorescent organic light-emitting diode with the TFMS-doped graphene anode showed lower operating voltage, and higher device efficiencies (104.1 cd A(-1), 80.7 lm W-1) than those with conventional ITO (84.8 cd A(-1), 73.8 lm W-1) | - |
dc.identifier.bibliographicCitation | ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, v.55, no.21, pp.6197 - 6201 | - |
dc.identifier.doi | 10.1002/anie.201600414 | - |
dc.identifier.issn | 1433-7851 | - |
dc.identifier.scopusid | 2-s2.0-84979724626 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/19985 | - |
dc.identifier.url | http://onlinelibrary.wiley.com/doi/10.1002/anie.201600414/abstract;jsessionid=19CE6859ACBC2EA305A5A253D81734B4.f02t02 | - |
dc.identifier.wosid | 000377918400009 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Versatile p-Type Chemical Doping to Achieve Ideal Flexible Graphene Electrodes | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordAuthor | chemical doping | - |
dc.subject.keywordAuthor | flexible OLEDs | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | transparent electrodes | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | SENSITIZED SOLAR-CELLS | - |
dc.subject.keywordPlus | SINGLE-LAYER GRAPHENE | - |
dc.subject.keywordPlus | INDIUM-TIN-OXIDE | - |
dc.subject.keywordPlus | TRANSPARENT ELECTRODES | - |
dc.subject.keywordPlus | TRIFLUOROMETHANESULFONIC ACID | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | RAMAN-SCATTERING | - |
dc.subject.keywordPlus | AIR-STABILITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
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