Thermoelectric and bulk mobility measurements in pentacene thin films

Abstract

Low-noise thermoelectric and electrical measurements were used to derive the dependences of Seebeck coefficient and hole mobility on carrier concentration and grain size in the "bulk" regions of thermally evaporated pentacene thin films (in contrast to the channel field-effect mobility typically measured using thin-film transistor geometries). Distinct charge transport regimes were observed for larger (0.5 and 0.8 μm) and smaller (0.2 μm) grain sizes, attributed to carrier-dopant scattering and percolation, respectively.