Solution-processible organic-inorganic hybrid bipolar field-effect transistors

Abstract

Organic-inorganic hybrid bipolar field-effect transistors (HBFETs) comprising a layer of p-type organic poly(3-hexylthiophene) (P3HT) separated from a parallel layer of n-type inorganic zinc oxide (ZnO) were demonstrated by solution processing. In order to achieve balanced hole and electron mobilities, we initially optimized the hole-transporting P3HT channel by the addition of the polar non-solvent acetonitrile (AN) to P3HT solutions in chloroform, which induced a selfassembled nano-fibril morphology and an enhancement of hole mobilities. For the electron channel, a wet-chemically-prepared ZnO layer was optimized by thermal annealing. Unipolar P3HT FET with 5% AN exhibited the highest hole mobility of 7.20 x 10(-2) cm(2)V(-1)s(-1) while the highest electron mobility (3.64 x 10(-2) cm(2)V(-1)s(-1)) was observed in unipolar ZnO FETs annealed at 200A degrees C. The organic-inorganic HBFETs consisting of the P3HT layer with 5% AN and ZnO annealed at 200A degrees C exhibited well-balanced hole and electron mobilities of 1.94 x 10(-2) cm(2)V(-1)s(-1) and 1.98 x 10(-2) cm(2)V(-1)s(-1), respectively.