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Lee, Zonghoon
Atomic-Scale Electron Microscopy Lab.
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dc.citation.endPage 1953 -
dc.citation.number 2 -
dc.citation.startPage 1948 -
dc.citation.title ACS NANO -
dc.citation.volume 10 -
dc.contributor.author Lee, Jae-Ung -
dc.contributor.author Kim, Kangwon -
dc.contributor.author Han, Songhee -
dc.contributor.author Ryu, Gyeong Hee -
dc.contributor.author Lee, Zonghoon -
dc.contributor.author Cheong, Hyeonsik -
dc.date.accessioned 2023-12-22T00:09:35Z -
dc.date.available 2023-12-22T00:09:35Z -
dc.date.created 2016-03-22 -
dc.date.issued 2016-02 -
dc.description.abstract Since the stacking order sensitively affects various physical properties of layered materials, accurate determination of the stacking order is important for studying the basic properties of these materials as well as for device applications. Because 2H-molybdenum disulfide (MoS2) is most common in nature, most studies so far have focused on 2H-MoS2. However, we found that the 2H, 3R, and mixed stacking sequences exist in few-layer MoS2 exfoliated from natural molybdenite crystals. The crystal structures are confirmed by HR-TEM measurements. The Raman signatures of different polytypes are investigated by using three different excitation energies that are nonresonant and resonant with A and C excitons, respectively. The low-frequency breathing and shear modes show distinct differences for each polytype, whereas the high-frequency intralayer modes show little difference. For resonant excitations at 1.96 and 2.81 eV, distinct features are observed that enable determination of the stacking order. -
dc.identifier.bibliographicCitation ACS NANO, v.10, no.2, pp.1948 - 1953 -
dc.identifier.doi 10.1021/acsnano.5b05831 -
dc.identifier.issn 1936-0851 -
dc.identifier.scopusid 2-s2.0-84960171591 -
dc.identifier.uri https://scholarworks.unist.ac.kr/handle/201301/18822 -
dc.identifier.url http://pubs.acs.org/doi/abs/10.1021/acsnano.5b05831 -
dc.identifier.wosid 000370987400030 -
dc.language 영어 -
dc.publisher AMER CHEMICAL SOC -
dc.title Raman Signatures of Polytypism in Molybdenum Disulfide -
dc.type Article -
dc.description.isOpenAccess FALSE -
dc.relation.journalWebOfScienceCategory Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary -
dc.relation.journalResearchArea Chemistry; Science & Technology - Other Topics; Materials Science -
dc.description.journalRegisteredClass scie -
dc.description.journalRegisteredClass scopus -
dc.subject.keywordAuthor 3R stacking -
dc.subject.keywordAuthor HR-TEM -
dc.subject.keywordAuthor molybdenum disulfide -
dc.subject.keywordAuthor MoS2 -
dc.subject.keywordAuthor Raman spectroscopy -
dc.subject.keywordPlus TRANSITION-METAL DICHALCOGENIDES -
dc.subject.keywordPlus BAND-GAP -
dc.subject.keywordPlus LAYER GRAPHENE -
dc.subject.keywordPlus BULK MOS2 -
dc.subject.keywordPlus PHONON -
dc.subject.keywordPlus MODES -
dc.subject.keywordPlus ABC -
dc.subject.keywordPlus MULTILAYER -
dc.subject.keywordPlus GENERATION -
dc.subject.keywordPlus SCATTERING -

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