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DC Field | Value | Language |
---|---|---|
dc.citation.number | 4S | - |
dc.citation.startPage | 04ED10 | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 55 | - |
dc.contributor.author | Shin, Sunhae | - |
dc.contributor.author | Kim, Kyung Rok | - |
dc.date.accessioned | 2023-12-22T00:07:49Z | - |
dc.date.available | 2023-12-22T00:07:49Z | - |
dc.date.created | 2016-03-23 | - |
dc.date.issued | 2016-03 | - |
dc.description.abstract | We propose complement double-peak negative differential resistance (NDR) devices with ultrahigh peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with conventional CMOS and its compact five-state latch circuit by introducing standard ternary inverter (STI). At the "high"-state of STI, n-type NDR device (tunnel diode with nMOS) has 1st NDR characteristics with 1st peak and valley by band-to-band tunneling (BTBT) and trap-assisted tunneling (TAT), whereas p-type NDR device (tunnel diode with pMOS) has second NDR characteristics from the suppression of diode current by off-state MOSFET. The "intermediate"-state of STI permits double-peak NDR device to operate five-state latch with only four transistors, which has 33% area reduction compared with that of binary inverter and 57% bit-density reduction compared with binary latch. | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.55, no.4S, pp.04ED10 | - |
dc.identifier.doi | 10.7567/JJAP.55.04ED10 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.scopusid | 2-s2.0-84963670389 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18759 | - |
dc.identifier.url | http://iopscience.iop.org/article/10.7567/JJAP.55.04ED10 | - |
dc.identifier.wosid | 000373929400048 | - |
dc.language | 영어 | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Novel five-state latch using double-peak negative differential resistance and standard ternary inverter | - |
dc.type | Article | - |
dc.description.isOpenAccess | FALSE | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalResearchArea | Physics | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | MULTIPLE-VALUED LOGIC | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordPlus | FIELD | - |
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