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Seok, Sang Il
Laboratory for Energy Harvesting Materials and Systems
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Performance improvement of Sb2S3-sensitized solar cell by introducing hole buffer layer in cobalt complex electrolyte

Author(s)
Im, Sang HyukKim, Hi-jungRhee, Jae HuiLim, Choong-SunSeok, Sang Il
Issued Date
2011-08
DOI
10.1039/c0ee00741b
URI
https://scholarworks.unist.ac.kr/handle/201301/18626
Fulltext
http://pubs.rsc.org/en/Content/ArticleLanding/2011/EE/c0ee00741b#!divAbstract
Citation
ENERGY & ENVIRONMENTAL SCIENCE, v.4, no.8, pp.2799 - 2802
Abstract
We found that the insertion of the poly-3-hexylthiophene (P3HT) layer into the pristine device results in great improvement of the efficiency, from 2.0% to 3.3% at 1 sun illumination. The improvement was mainly attributed to the improved fill factor, which for the Sb2S3 sensitized solar cell was seriously degraded from 56.0% (at 0.1 sun) to 31.5% (at 1 sun), whereas the fill factor of the Sb2S3/P3HT sensitized solar cell was only moderately degraded, from 59.3% (at 0.1 sun) to 40.4%. The role of P3HT as a hole buffer layer was analyzed by electrochemical impedance spectroscopy (EIS)
Publisher
ROYAL SOC CHEMISTRY
ISSN
1754-5692

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