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DC Field | Value | Language |
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dc.citation.endPage | 1616 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1609 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 19 | - |
dc.contributor.author | Kang, Seok Ju | - |
dc.contributor.author | Bae, Insung | - |
dc.contributor.author | Park, Youn Jung | - |
dc.contributor.author | Park, Tae Ho | - |
dc.contributor.author | Sung, Jinwoo | - |
dc.contributor.author | Yoon, Sung Cheol | - |
dc.contributor.author | Kim, Kyung Hwan | - |
dc.contributor.author | Choi, Dong Hoon | - |
dc.contributor.author | Park, Cheolmin | - |
dc.date.accessioned | 2023-12-22T08:06:41Z | - |
dc.date.available | 2023-12-22T08:06:41Z | - |
dc.date.created | 2015-08-24 | - |
dc.date.issued | 2009-05 | - |
dc.description.abstract | A new type of nonvolatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (P(VDF-TrFE)) memory based on an organic thin-film transistor (OTFT) with a single crystal of tri-isopropylsilylethynyl pentacene (TIPS-PEN) as the active layer is developed. A bottom-gate OTFT is fabricated with a thin P(VDF-TrFE) film gate insulator on which a one-dimensional ribbon-type TIPS-PEN single crystal, grown via a solvent-exchange method, is positioned between the Au source and drain electrodes. Post-thermal treatment optimizes the interface between the flat, single-crystalline ab plane of TIPS-PEN and the polycrystalline P(VDF-TrFE) surface with characteristic needle-like crystalline lamellae. As a consequence, the memory device exhibits a substantially stable source-drain current modulation with an ON/OFF ratio hysteresis greater than 10(3), which is superior to a ferroelectric P(VDF-TrFE) OTFT that has a vacuum-evaporated pentacene layer. Data retention longer than 5 x 10(4) s is additionally achieved in ambient conditions by incorporating an interlayer between the gate electrode and P(VDF-TrFE) thin film. The device is environmentally stable for more than 40 days without additional passivation. The deposition of a seed solution of TIPS-PEN on the chemically micropatterned surface allows fabrication arrays of TIPS-PEN single crystals that can be potentially useful for integrated arrays of ferroelectric TFT memory | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.19, no.10, pp.1609 - 1616 | - |
dc.identifier.doi | 10.1002/adfm.200801097 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.scopusid | 2-s2.0-66449090458 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18483 | - |
dc.identifier.url | http://onlinelibrary.wiley.com/doi/10.1002/adfm.200801097/abstract | - |
dc.identifier.wosid | 000266626100013 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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