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강석주

Kang, Seok Ju
Smart Materials for Energy Lab.
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Polarization retention of thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene film capacitors

Author(s)
Park, Youn JungChang, JiyounKang, Seok JuPark, Cheolmin
Issued Date
2009-09
DOI
10.1063/1.3216053
URI
https://scholarworks.unist.ac.kr/handle/201301/18480
Fulltext
http://scitation.aip.org/content/aip/journal/apl/95/10/10.1063/1.3216053
Citation
APPLIED PHYSICS LETTERS, v.95, no.10, pp.102902
Abstract
Excellent retention of the initial remanent polarizations was observed in ca. 200 nm thick ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) film capacitors with the writing pulse amplitude and time width of +/- 20 V and 1 ms, respectively, over 200 h at 80 degrees C. The opposite state program turned out more sensitive to retention deterioration than the same state one in both switching and nonswitching mode when either writing pulse amplitude or time width decreases. Nonswitching retention in the opposite state mode is in particular one of the most critical properties for designing a ferroelectric polymer capacitor memory
Publisher
AMER INST PHYSICS
ISSN
0003-6951

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