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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 2818 | - |
dc.citation.number | 17 | - |
dc.citation.startPage | 2812 | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 19 | - |
dc.contributor.author | Kang, Seok Ju | - |
dc.contributor.author | Park, Youn Jung | - |
dc.contributor.author | Bae, Insung | - |
dc.contributor.author | Kim, Kap Jin | - |
dc.contributor.author | Kim, Ho-Cheol | - |
dc.contributor.author | Bauer, Siegfried | - |
dc.contributor.author | Thomas, Edwin L. | - |
dc.contributor.author | Park, Cheolmin | - |
dc.date.accessioned | 2023-12-22T07:40:04Z | - |
dc.date.available | 2023-12-22T07:40:04Z | - |
dc.date.created | 2015-08-21 | - |
dc.date.issued | 2009-09 | - |
dc.description.abstract | Here, a facile route to fabricate thin ferroelectric poly(vinylidene fluoride) (PVDF)/poly(methylmethacrylate) (PMMA) blend films with very low surface roughness based on spin-coating and subsequent melt-quenching is described. Amorphous PMMA in a blend film effectively retards the rapid crystallization of PVDF upon quenching, giving rise to a thin and flat ferroelectric film with nanometer scale beta-type PVDF crystals. The still, flat interfaces of the blend film with metal electrode and/or an organic semi-conducting channel layer enable fabrication of a highly reliable ferroelectric capacitor and transistor memory unit operating at voltages as low as 15 V. For instance, with a TIPS-pentacene single crystal as an active semi-conducting layer, a flexible ferroelectric field effect transistor shows a clockwise I-V hysteresis with a drain current bistability of 10(3) and data retention time of more than 15 h at +/- 15 V gate voltage. Furthermore, the robust interfacial homogeneity of the ferroelectric film is highly beneficial for transfer printing in which arrays of metal/ferroelectric/metal micro-capacitors are developed over a large area with well defined edge sharpness | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.19, no.17, pp.2812 - 2818 | - |
dc.identifier.doi | 10.1002/adfm.200900589 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.scopusid | 2-s2.0-69949155612 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18479 | - |
dc.identifier.url | http://onlinelibrary.wiley.com/doi/10.1002/adfm.200900589/abstract | - |
dc.identifier.wosid | 000270001000015 | - |
dc.language | 영어 | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Printable Ferroelectric PVDF/PMMA Blend Films with Ultralow Roughness for Low Voltage Non-Volatile Polymer Memory | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scopus | - |
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