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DC Field | Value | Language |
---|---|---|
dc.citation.endPage | 589 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 582 | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 3 | - |
dc.contributor.author | Shin, Yu Jin | - |
dc.contributor.author | Kang, Seok Ju | - |
dc.contributor.author | Jung, Hee Joon | - |
dc.contributor.author | Park, Youn Jung | - |
dc.contributor.author | Bae, Insung | - |
dc.contributor.author | Choi, Dong Hoon | - |
dc.contributor.author | Park, Cheolmin | - |
dc.date.accessioned | 2023-12-22T06:36:21Z | - |
dc.date.available | 2023-12-22T06:36:21Z | - |
dc.date.created | 2015-08-24 | - |
dc.date.issued | 2011-02 | - |
dc.description.abstract | Both chemically and electrically robust ferroelectric poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) films were developed by spin-coating and subsequent thermal annealing with the thermal cross-linking agent 2,4,4-trimethyl-1,6-hexanediamine (THDA). Well-defined ferroelectric beta crystalline domains were developed with THDA up to approximately 50 wt %, with respect to polymer concentration; resulting in characteristic ferroelectric hysteresis polarization-voltage loops in metal/cross-linked ferroelectric layer/metal capacitors with remnant polarization of approximately 4 mu C/cm(2). Our chemically networked film allowed for facile stacking of a solution-processable organic semiconductor on top of the film, leading to a bottom-gate ferroelectric field effect transistor (FeFET). A low-voltage operating FeFET was realized with a networked PVDF-TrFE film, which had significantly reduced gate leakage current between the drain and gate electrodes. A solution-processed single crystalline tri-isopropylsilylethynyl pentacene FeFET with a chemically cross-linked PVDF-TrFE film showed reliable I-V hysteresis with source-drain ON/OFF current bistablility of 1 x 10(3) at a sweeping gate voltage of +/- 20 V. Furthermore, both thermal micro/nanoimprinting and transfer printing techniques were conveniently combined for micro/nanopatterning of chemically resistant cross-linked PVDF-TrFE films | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.3, no.2, pp.582 - 589 | - |
dc.identifier.doi | 10.1021/am1011657 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.scopusid | 2-s2.0-84862832919 | - |
dc.identifier.uri | https://scholarworks.unist.ac.kr/handle/201301/18466 | - |
dc.identifier.url | http://pubs.acs.org/doi/abs/10.1021/am1011657 | - |
dc.identifier.wosid | 000287639400066 | - |
dc.language | 영어 | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Chemically Cross-Linked Thin Poly(vinylidene fluoride-co-trifluoroethylene)Films for Nonvolatile Ferroelectric Polymer Memory | - |
dc.type | Article | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
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