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강석주

Kang, Seok Ju
Smart Materials for Energy Lab.
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Non-volatile memory characteristics of epitaxially grown PVDF-TrFE thin films and their printed micropattern application

Author(s)
Park, Youn JungKang, Seok JuShin, YujinKim, Richard H.Bae, InsungPark, Cheolmin
Issued Date
2011-03
DOI
10.1016/j.cap.2010.11.119
URI
https://scholarworks.unist.ac.kr/handle/201301/18464
Fulltext
http://www.sciencedirect.com/science/article/pii/S1567173911000289
Citation
CURRENT APPLIED PHYSICS, v.11, no.2, pp.E30 - E34
Abstract
Highly ordered poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) ultrathin films epitaxially grown on friction-transferred polytetrafluoroethylene (PTFE) surface were incorporated in the Metal-Ferroelectric-Metal (MFM) and Metal-Ferroelectric-Insulator-Semiconductor (MFIS) memory structure. The non-volatile memory properties in epitaxially ordered ferroelectric films were characterized with polarization and capacitance hysteresis curves at low voltage sweep of +/- 12 V and +/- 5 V in each stacking structure of MFM and MFIS, respectively. Furthermore, we present the facile micro-and nano-patterning method of fabricating MFM arrays including highly ordered PVDF-TrFE films by microimprinting. Ultrathin ferroelectric polymer films grown by epitaxy were microimprinted with a silver coated poly-dimethylesiloxane (PDMS) mold at 170 degrees C with excellent quality and the simultaneous transfer of silver electrodes on the imprinted PVDF-TrFE enabled us to fabricate the arrays of MFM capacitors in which ferroelectricity in imprinted region was well-maintained after patterning process at high temperature above 170 degrees C with good thermal stability. (C) 2011 Elsevier B. V. All rights reserved
Publisher
ELSEVIER SCIENCE BV
ISSN
1567-1739

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